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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS VCBO CHA 2N6098 2N6099 2N6100 Open emitter Collector-base voltage VCEO Collector-emitter voltage 2N6100 2N6101 IN SEM NG 2N6101 2N6098 2N6099 CON I TOR DUC VALUE 70 70 80 80 70 70 80 80 UNIT V Open base V VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open collector 8 10 V A W ae ae TC=25ae 75 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6098 2N6099 VCEO(SUS) Collector-emitter sustaining voltage 2N6100 2N6101 VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage 2N6098/6099 VBE Base-emitter on voltage 2N6098 2N6099 2N6100 2N6101 SYMBOL CONDITIONS MIN 70 70 TYP. MAX UNIT IC=0.1A ;IB=0 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ; VCE=4V 1.3 IC=5A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150ae VEB=8V; IC=0 1.3 3.5 V V V ICBO IEBO Collector cut-off current V 2N6100/6101 Emitter cut-off current hFE DC current gain INC NG S HA 2N6098/6099 OND MIC E IC=4A ; VCE=4V IC=5A ; VCE=4V IC=1A ; VCE=10V TOR UC 0.5 2.0 1.0 20 80 mA mA 2N6100/6101 fT Transition frequency 0.8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6098 2N6099 2N6100 2N6101 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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